Explanation:

 2D Material For P-Type Semiconductor
University of Utah engineers have discovered a new 2D semiconducting material that could open the door to faster computers and smartphones that also consume a lot less power.
The tin monoxide (SnO) semiconductor was discovered by a team led by University of Utah materials science and engineering associate professor Ashutosh Tiwari
It is a layer of 2D material only one atom thick, allowing electrical charges to move through it much faster than conventional 3D materials such as silicon.
With electrons in 3D materials such as silicon becoming difficult to control at dimensions around 5nm, the use of 2D materials - materials that are one or two atoms thick - has become a subject of research in the last five years because electrons can only move in one direction within 2D materials meaning they move faster than in 3D materials.
Other 2D materials like graphene, molybdenun disulfide and borophene only allow the movement of N-type electrons, but Utah's tin monoxide is the first stable P-type 2D semiconductor material and allows the movement of both negative electrons and positive charges.
This material could be used in transistors, the lifeblood of all electronic devices such as computer processors and graphics processors in desktop computers and mobile devices.
Now, the electrons also require much less power to run, a boon for mobile electronics that have to run on battery power.
This could also be important for medical devices such as electronic implants that will run longer on a single battery charge.
The newly discovered semi-conducting material could lead to computers and smart phones that are over 100 times faster than regular devices.