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Which of the following statements is/are correct ?
I. Pure Si doped with trivalent impurities gives a p-type semiconductor
II. Majority carriers in a n-type semiconductor are holes
III. Minority carriers in a p-type semiconductor are electrons
IV. The resistance of intrinsic semiconductor decreases with increase of temperature
I only
I, III and IV
I and IV
II only
The majority charge carrier in n-type semiconductor is electrons (negative (n)) and in p-type semiconductor majority charge carrier are holes (Positive charge(P)).
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